<i>M</i>-plane AlGaN digital alloy for microwire UV-B LEDs

The growth of non-polar AlGaN digital alloy (DA) is achieved by metal-organic vapor phase epitaxy using GaN microwire m-facets as the template. This DA consisting five periods two monolayer-thick layers and (approximately 50% Al-content) integrated into middle an n-p GaN/AlGaN junction to design core-shell wire-μLED. optical emission active zone investigated 5 K cathodoluminescence consistent with bulk behavior. Several contributions from 295 310 nm are attributed lesser thickness and/or composition fluctuations DA. Single-wire μLED fabricated a lithography process, I–V measurements confirm diode rectifying Room temperature UV electroluminescence originating m-plane accomplished at nm.